2013.09-2017.07  Bachelor of Electronic Science and Technology, Hebei University of Technology

2017.09-2022.07  Ph.D of Microelectronics and Solid-State Electronics, Peking University

2022.07 - 2024.08：Senior Engineer, Beijing Huawei Digital Technologies Co., Ltd.

2024.08 - Present：Experimenter, School of Physics, Renmin University of China.

1 Fabrication of novel storage devices

2 Research on integration technology of storage arrays

Focused on the field of novel semiconductor memory devices and integration technologies, including resistive random-access memory (RRAM) and ferroelectric random-access memory (FeRAM), the research directions mainly concentrate on developing new memory materials, optimizing memory structure design, and improving the performance and reliability of data storage systems. Multiple articles have been published in internationally renowned journals.

Publications：

1. X. Ding, P. Huang, Y. Zhao, Y. Feng and L. Liu, Understanding of the Volatile and Nonvolatile Switching in Ag-Based Memristors, IEEE Transactions on Electron Devices, 69(3), 1034-1040 (2022).

2. X. Ding, X. Wang, Y. Feng, W. Shen and L. Liu, Low operation current of Si/HfO2 double layers based RRAM device with insertion of Si film, Japanese Journal of Applied Physics, 59(SG), SGGB16 (2020).

3. X. Ding, Y. Feng, P. Huang, L. Liu and J. Kang, Low-power resistive switching characteristic in HfO2/TiOx Bi-layer resistive random-access memory, Nanoscale Research Letters, 14(1), 1-7 (2019).

4. X. Ding, L. Liu, Y. Feng and P. Huang, Effect of TiOx Film Thickness on Resistive Switching Behavior of TiN/TiOx/HfO2/Pt RRAM Device, 2019 Silicon Nanoelectronics Workshop (SNW), IEEE, 1-2 (2019).

5. X. Ding, D. Zhu, Y. Feng, L. Cai, P. Huang, L. Liu and J. Kang, Low-power, multilevel and analog characteristics in the multi-layer-oxide based RRAM devices compatible with CMOS technology, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), IEEE, 1-3 (2018).